Semiconductor Fundamentals, Characterization, Materials & Processing (SF- Ch- M&P)10 ECTS
(englische Bezeichnung: onductor Fundamentals, Characterization, Materials & Processing)
(Prüfungsordnungsmodul: Semiconductor Fundamentals, Characterization, Materials & Processing)

Lehrveranstaltungen:

• • Advanced Semiconductors Introduction: Fundamentals (WS 2020/2021)
    (Vorlesung, 2 SWS, Wolfgang Heiß, Mo, 16:15 - 17:45)
  • Crystal Growth 1 - Fundamentals of Crystal Growth and Semiconductor Technology (WS 2020/2021)
    (Vorlesung, 2 SWS, Peter Wellmann, jeden Monat am 2. Mo, 14:15 - 15:00, Zoom-Meeting; ab 9.11.2020; https://fau.zoom.us/j/94576058631?pwd=QVBOK0N4cVp3cmM1WHdsdUlkUGY3dz09; Vorbesprechung: 9.11.2020, 14:15 - 15:00 Uhr, Zoom-Meeting)
  • Advanced Semiconductors Introduction: Characterization (SS 2021)
    (Vorlesung, 2 SWS, Wolfgang Heiß, Mi, 14:15 - 15:45, 3.71)
  • Crystal Growth - Lab Work 2 Semiconductor Technology (WS 2020/2021)
    (Praktikum, 2 SWS, Anwesenheitspflicht, Peter Wellmann, Do, 8:00 - 17:00, 3.71; Do-Termine entsprechend der Gruppeneinteilung)

Inhalt:

Lecture

• Crystal structure of solids

• Introduction to quantum mechanics in solids

• Carrier concentration and charge transport

• Excess carriers in semiconductors

• The pn junction

• Measurement of resistivity, carrier concentration, and mobility

• Characterization of defects semiconductors

• Determination of optical parameters
  

Lecture, Crystal growth and semiconductor technology

• Fundamentals of crystal growth (melt ~, solution ~, vapor growth)

• Fundamentals of Silicon Semiconductor Device Technology (Oxidation, Doping by diffusion and ion implantation, etching, metallization, lithography, packaging)
  

PR: Processing of semiconductor wafer for optoelectronic characterization (polishing, evaluation of surface properties, metallization)

Lernziele und Kompetenzen:

• The students will get the theoretical background and the ability to determine the required parameters for mathematically model the fundamental electrical properties of semiconductors and semiconductor junctions, representing the basic units used for photovoltaics and modern lighting.

• The deepening of fundamental understanding of semiconductor properties, as a solid basis for further lectures dealing with the physics of semiconductor devices

• Understanding typical experimental techniques to determine basic parameters of semiconductors and semiconductor devices by electronic or optical measurements.

• The student gain fundamental knowledge in crystal growth and semiconductor technology.

• The students are trained in processing of semiconductor wafers. The students gain knowledge in the preparation of technical reports as well as in working in a team.
  

Verwendbarkeit des Moduls / Einpassung in den Musterstudienplan:

1. Nanotechnologie (Master of Science)
   (Po-Vers. 2020w | TechFak | Nanotechnologie (Master of Science) | Gesamtkonto | Kernfächer | Materialien der Elektronik und der Energietechnologie | Semiconductor Fundamentals, Characterization, Materials & Processing)

Studien-/Prüfungsleistungen:

Semiconductor Fundamentals, Characterization, Materials & Processing (Prüfungsnummer: 62511)

(englischer Titel: Semiconductor Fundamentals, Characterization, Materials & Processing)

Prüfungsleistung, mündliche Prüfung, Dauer (in Minuten): 30, benotet, 10 ECTS

Anteil an der Berechnung der Modulnote: 100.0 %

weitere Erläuterungen:
Jeder Teil (Crystal Growth und Advanced Semiconductors) trägt jeweils zu 50% der Note bei.
Voraussetzung für die Teilnahme an der mündlichen Prüfung ist das erfolgreich abgeschlossene Praktikum "Crystal Growth - Lab Work 2 Semiconductor Technology (unbenoteter Leistungsnachweis mit 2 Versuchen und jeweiligem Protokoll (11-15 Seiten).

Prüfungssprache: Deutsch oder Englisch

Erstablegung: SS 2021, 1. Wdh.: WS 2021/2022

1. Prüfer:

Wolfgang Heiß,

2. Prüfer:

Peter Wellmann