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Crystal Growth 1 - Fundamentals of Crystal Growth and Semiconductor Technology (CG-1(A))- Lecturer
- Prof. Dr.-Ing. Peter Wellmann
- Details
- Vorlesung
2 cred.h, ECTS studies, ECTS credits: 3
nur Fachstudium, Sprache Englisch
Time and place: Tue 14:15 - 15:45, 3.71; comments on time and place: Termine: 24.Okt 22 / 7.Nov 22 / 21.Nov 22 / 05.Dez 22 / 19.Dez 22 / 16.Jan 23 / 30.Jan 23
- Fields of study
- WPF MWT-MA-WET ab 1 (ECTS-Credits: 3)
WPF ET-MA-MWT ab 1 (ECTS-Credits: 3)
WPF NT-MA ab 1 (ECTS-Credits: 3)
- Prerequisites / Organisational information
- Lernkozept: Blended Learning (50% synchrone "Live-Discussions", 50% asynchrone Lerninhalte über Studon)
- Contents
- Fundamentals of crystal growth with focus on melt growth, introduction to the processing of Si-based semiconductor devices using planar technology:
I.1 Fundamentals of Crystal Growth
· Introduction
· Driving force for crystallization
· Heat and mass transport
· Melt convection (forced convection, magnetic fields)
· Meniscus formation
· Shape of growth interface
· Growth kinetics (Kossel model, Jackson Factor, etc.)
I.2 Melt Growth (Si, III-V, Oxides)
· Review – preparation of semiconductor grade Si source material
· Si Czochralski & floating zone processes
· Point defects & oxygen in bulk silicon
· Overview on further Si processing (bulk and thin films)
· Czochralski & Vertical Gradient Freeze growth process of III-V
compounds
· Semiconductor substrates (semi-insulating materials)
· Solar Silicon growth techniques (casting, "shaped crystal growth, …)
II. Semiconductor Technology – focus on silicon
II.1 Fundamentals of Planar Technology
II.2 Oxidation Process
II.3 Lithography
II.4 Etching
II.5 Doping by Diffusion & Ion Implantation
II.6 Metallization and Vacuum Deposition Techniques
II.7 Packaging
(automatisch geplant, erwartete Hörerzahl original: 15, fixe Veranstaltung: nein)
- Recommended literature
- S.M. Sze; Semiconductor Devices – Physics and Technology (14 x T80/8S58(2))
P.J. Wellmann; Materialien der Elektronik und Energietechnik : Halbleiter, Graphen, funktionale Materialien; Springer Vieweg (2019), 2nd edition, ISBN 978-3-658-26991-3
- ECTS information:
- Title:
- Crystal Growth 1 - Fundamentals of Crystal Growth and Semiconductor Technology
- Credits: 3
- Prerequisites
- Electronic exam, passing with at least 70%
- Contents
- Fundamentals of crystal growth with focus on melt growth, introduction to the processing of Si-based semiconductor devices using planar technology:
I.1 Fundamentals of Crystal Growth
· Introduction
· Driving force for crystallization
· Heat and mass transport
· Melt convection (forced convection, magnetic fields)
· Meniscus formation
· Shape of growth interface
· Growth kinetics (Kossel model, Jackson Factor, etc.)
I.2 Melt Growth (Si, III-V, Oxides)
· Review – preparation of semiconductor grade Si source material
· Si Czochralski & floating zone processes
· Point defects & oxygen in bulk silicon
· Overview on further Si processing (bulk and thin films)
· Czochralski & Vertical Gradient Freeze growth process of III-V compounds
· Semiconductor substrates (semi-insulating materials)
· Solar Silicon growth techniques (casting, "shaped crystal growth, …)
II. Semiconductor Technology – focus on silicon
II.1 Fundamentals of Planar Technology
II.2 Oxidation Process
II.3 Lithography
II.4 Etching
II.5 Doping by Diffusion & Ion Implantation
II.6 Metallization and Vacuum Deposition Techniques
II.7 Packaging
- Literature
- S.M. Sze; Semiconductor Devices – Physics and Technology (14 x T80/8S58(2))
P.J. Wellmann; Materialien der Elektronik und Energietechnik : Halbleiter, Graphen, funktionale Materialien; Springer Vieweg (2019), 2nd edition, ISBN 978-3-658-26991-3
- Additional information
- Keywords: crystal growth, processing, silicon, semiconductor technology
Expected participants: 15
www: https://www.studon.fau.de/studon/goto.php?target=crs_3259598
- Verwendung in folgenden UnivIS-Modulen
- Startsemester WS 2022/2023:
- Crystal Growth 1 (cgl-1)
- Semiconductor Fundamentals, Characterization, Materials & Processing (SF- Ch- M&P)
- Department: Chair of Materials for Electronics and Energy Technology
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